Customized High Purity Graphite Powder Isostatic Graphite Black

The grain size of graphite powder can be customized according to the client's demand

Silicon carbide single crystal has a large band gap width, high thermal conductivity, high electron saturation migration rate and high breakdown electric field properties. In the field of high temperature, high pressure, high frequency, high-power electronic devices and aerospace, nuclear energy and other extreme environmental applications have irreplaceable advantages. In many strategic industries such as broadband communications, solar energy, automobile manufacturing, semiconductor lighting, smart grid, it can reduce energy loss by more than 50%, making up for the defects of traditional semiconductor material devices in practical applications.

High purity graphite powder is the key core raw material in the field of silicon carbide semiconductor in China, and there is a significant demand in this field. The purity of SiC powder directly affects the quality and performance of SiC single crystals grown by the PVT method. The raw materials for preparing SiC powder are high-purity Si powder and high-purity C powder, and the purity of C powder directly affects the purity of SiC powder. At this stage, the main methods for synthesizing high-purity SiC powder are the self-propagating high-temperature synthesis (SHS) method and the CVD method. Among them, the SHS method has been rapidly promoted and widely used in the preparation of raw materials for semiconductor wafers.

Ultra-high-purity graphite powder for SiC single crystals has specific requirements not only for total ash content (≤5 ppm), but also for particle size distribution, crystal structure, and specific impurity elements such as boron, aluminum, nitrogen, and vanadium.